Umgangatho ophezulu we-Gallium Metal 4N〜7N Ukunyibilika okucocekileyo
| Isinyithi seGallium | |
| Isigaba kwi-STP | eqinileyo |
| Indawo yokunyibilika | 302.9146K(29.7646°C, 85.5763°F) |
| Indawo yokubilisa | 2673K (2400°C, 4352°F)[2] |
| Ubuninzi (kufuphi ne-rt) | 5.91g/cm3 |
| xa ulwelo (kwi mp) | 6.095g/cm3 |
| Ubushushu bomxube | 5.59kJ/mol |
| Ubushushu bomphunga | 256kJ/mol[2] |
| Umthamo wobushushu beMolar | 25.86J/(mol · K) |
Umgangatho oPhezulu weGallium Metal Specification
Ubunyulu:4N 5N 6N 7N
Ukupakisha: 25kg / ibhotile yeplastiki, 20 ibhotile / ibhokisi.
Isetyenziselwa ntoni iGallium Metal?
Ukusetyenziswa kwe-Semiconductor yeyona mfuno iphambili ye-gallium, kwaye isicelo esilandelayo esikhulu se-gadolinium gallium garnets.
I-6N high-purity gallium isetyenziselwa ukukhonza ishishini le-semiconductor.malunga ne-98% yokusetyenziswa kwe-gallium yi-Gallium arsenide (GaAs) kunye ne-gallium nitride (i-GaN), esetyenziswa kwizinto ze-elektroniki ezimele.Malunga ne-66% ye-semiconductor gallium isetyenziswa kwiisekethe ezidityanisiweyo (ubukhulu becala i-gallium arsenide), umzekelo ukuveliswa kweetshiphusi ze-Ultra-high-speed logic kunye nee-MESFET ukwenzela i-microwave preamplifiers ezinengxolo ephantsi kwiiselfowuni.
I-Gallium iphinda ibe yinxalenye ye-photovoltaic compounds (umzekelo i-copper indium gallium selenium sulfide Cu (In, Ga) (Se, S) 2) esetyenziswe kwiipaneli zelanga njengenye indlela eneendleko ezifanelekileyo kwi-crystalline silicon.
